Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/05

  • 研究者氏名
    Researcher Name

    秩父重英 Shigefusa CHICHIBU
    教授 Professor
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    Division of Measurements, Quantum Optoelectronics Laboratory
  • 研究キーワード
    Research Keywords

    時間・空間分解 発光スペクトロスコピー
    Optical properties of condensed matter, Optical devices
    Quantum nanostructures
    Temporally / Spatially resolved emission / carrier dynamics
Research Subject
Development of ultra wide bandgap semiconductor materials and devices

研究の背景 Background


Research objectives are to design and create quantum nanostructures desirable for environment-friendly functional optoelectronic devices, especially workable in deep ultraviolet wavelengths, based on wide bandgap semiconductors. Ultrafast recombination dynamics of excited particles in these structures are studied by time-resolved spectroscopy, and local luminescence properties are proved by spatially-resolved luminescence techniques. We eventually contribute to SDGs for our lives.

研究の目標 Outcome


We are growing quantum structures based on wide bandgap (B, Al, In, Ga)N, NiO, and (Mg, Zn)O semiconductors by metalorganic vapor phase epitaxy (MOVPE) and unique helicon-wave-excited-plasma sputtering epitaxy (HWPSE) methods. Ultrafast recombination dynamics are studied by deep ultraviolet temporally resolved photoluminescence, spatially resolved cathodoluminescence, and spatio-time-resolved cathodoluminescence system equipped with a home-made focused pulsed electron gun.

研究図Research Figure

Fig.1. Environment-friendly wide bandgap nitride and oxide semiconductors.

Fig.2. Concept of Spatio-time-resolved cathodoluminescence (STRCL) system equipped with a femtosecond pulsed photoelectron gun

Fig.3. m-plane Al1-xInxN Vacuum Fluorescent Display (VFD) devices using AlInN atomically ordered atoms and planes.  

文献 / Publications

Appl. Phys. Lett. 119, 182106 (2021). Appl. Phys. Express 15, 055504 (2022). Jpn. J. Appl. Phys. 61, 050501 (2022).
Appl. Phys. Lett. 119, 091105 (2021). Sci. Rep. 10, 18570 (2020). Appl. Phys. Lett. 117, 071103 (2020).
J. Appl. Phys. 127, 215704 (2020). Appl. Phys. Lett. 113, 191901 (2018).