ネットワーク型共同研究拠点を支える 人・環境と物質をつなぐイノベーション創出ダイナミック・アライアンス 研究者データベース

Metal chalcogenide quantum dots and metal halide perovskite nanomaterials emerge as a promising and cost-effective class of semiconductors for next-generation photoluminescent, electroluminescent and photovoltaic devices. These nanomaterials own high optical absorption coefficients and narrow-band bright photoluminescence, which are in addition to the composition-and size-dependent tunable bandgap, exciton binding energy, and carrier diffusion. However, these materials show size- and shape-dependent excitonic and carrier properties, which are in addition to stability issues and photoluminescence blinking, all due to defects and charging. Therefore, it is essential to classify the excitonic and carrier recombination mechanisms, along with crystal engineering and finding measures to suppress blinking and bleaching to develop high-quality quantum optical materials.

Semiconductor quantum dots, nanocrystals, and microcrystals with stable photoluminescence and electroluminescence have been developed by crystal engineering. The optical properties of these materials are analyzed microscopically and spectroscopy to unveil the origins of delayed carrier recombination, carrier trapping, charging, blinking, and bleaching. Random charging, blinking, and bleaching of metal chalcogenide quantum dots are suppressed by vacancy filling and photoinduced electron transfer. Also, bandgap tuning by crystal engineering and supercrystal assembling, the research advances to develop photonic, mechano-optical, electro-optical, and electro-mechanical nanosensors. Another aspect of the research is the development of photonic molecular sensors for cell biological and phototherapeutic applications.