Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/07

  • 研究者氏名
    Researcher Name

    鈴木一誓 Issei SUZUKI
    助教 Assistant Professor
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    金属資源プロセス研究センター 原子空間制御プロセス研究分野
    Center for Mineral Processing and Metallurgy, Atomic Site Control in Inorganic Materials
  • 研究キーワード
    Research Keywords

    Oxide semiconductors
    First principles calculation
    Photoelectron spectroscopy
Research Subject
Exploration of new oxide semiconductors and analysis of their physical properties

研究の背景 Background


Most of oxide semiconductors are transparent with wide band and some of them are used as transparent electrode. However, the active layers in such optoelectronic devices as solar cell and LED have been dominated by pnictides or chalcogenides; oxides have not been used so frequently in this field. This is because there are almost no oxides semiconductors possessing direct band gap in the visible or IR region. New oxides semiconductors are needed to break the conventional mold; “oxides are exclusively suitable for the transparent electrodes.”

研究の目標 Outcome


My main objective is to design the new materials based on crystal chemistry and demonstrate their synthesis. Meta-stable materials, which cannot be obtained by conventional equilibrium reaction, have been synthesized by ion-exchange method (Fig. 1). Thin film fabrication process is also my target field (Fig. 2). First principles calculation is employed to reveal the physical properties of new materials (Fig. 3). I am aimed to demonstrate the potential of oxide semiconductors based on experimental chemistry and calculation science.

研究図Research Figure

Fig.1. The novel oxide semiconductor, β-CuGaO2, with wurtzite-derived structures possesses the optimal band gap for the solar cell. Fig.2. Fabrication process of the thin films of β-CuGaO2 via the ion-exchange method. Fig.3. Band structure and electron density map of the β-CuGaO2 obtained by first principles calculations.

文献 / Publications

J. Am. Chem. Soc., 136, 3378 (2014).  Inorg. Chem., 55, 7610 (2016).  Appl. Phys. Express, 10, 095501 (2017).

<Review> Semicond. Sci. Technol., 32, 013007 (2017).