Research Institute for Electronic Science, Hokkaido University


LAST UPDATE 2017/02/25

  • 研究者氏名
    Researcher Name

    近藤憲治 Kenji KONDO
    准教授 Associate Professor
  • 所属
    Professional Affiliation

    Research Institute for Electronic Science, Hokkaido University

    物質科学研究部門 ナノ構造物性研究分野
    Material and Molecular Sciences, Laboratory of Nanostructure Physics
  • 研究キーワード
    Research Keywords

    Condensed Matter Theory
    Semiconductor device engineering
    First principle electronic structure calculation
Research Subject
Search for novel spintronics devices and study of exact energy spectrum of low dimensional electron gas

研究の背景 Background


The LSI circuit faces CMOS scaling limits that comes from the limits of micro-fabrication using optical lithography. As a result, the research has been conducting for seeking the candidate devices which overcome the limits all over the world. The devices are called beyond CMOS devices. Spintronics is a new research field that could replace the electronics. Also, electrons are frequently confined within very small region due to the integration, resulting in the strong correlation among electrons. It is very important to investigate the exact energy spectrum of such electron systems for developing novel devices and/or discovering new physical phenomena.

研究の目標 Outcome


I try to seek for novel spintronics devices and clarify their characteristics of spin transport theoretically, and realize the device with experimentalist. Spin orbit interaction can be regarded as non-abelian SU(2) gauge field. As a result, topological invariants are frequently associated with it. I would like to invent a novel device which utilizes the topological invariants. On the other hand, I try to calculate oneparticle energy spectrum of low-dimensional electron systems using GW and GWΓ approximations, taking into consideration spin orbit interaction. I hope that this calculation will lead to exchange-correlation kernel of density functional theory

研究図Research Figure

Fig.1. (a) A spin quantum cross structure device and (b) its calculated I-V characteristics. Fig.2. (a) A model of FM/SC/FM structure under spin orbit interaction and (b) its calculated semiconductor thickness dependence of MR ratio. Fig.3. (a) Feynman graph’s representation of Hedin’s equations and (b) the energy spectrum of 2D electrons with Coulomb force. F

文献 / Publications

J. Appl. Phys., 115, 17C701 (2014). J. Appl. Phys., 115, 17B901 (2014). Jpn. J. Appl. Phys., 52, 013001 (2013). Appl. Phys. Lett., 101, 32411 (2012). J. Appl. Phys., 111, 07C713 (2012). 解説:「ホール効果と異常ホール効果, そしてその先にあるもの」, 日本金属学会誌 まてりあ 48, 55 (2009). Jpn. J. Appl. Phys., 45, 9137 (2006).