The Institute of Scientific and Industrial Research, Osaka University


LAST UPDATE 2017/02/26

  • 研究者氏名
    Researcher Name

    神吉輝夫 Teruo KANKI
    准教授 Associate Professor
  • 所属
    Professional Affiliation

    The Institute of Scientific and Industrial Research, Osaka University

    Nanoscience and Nanotechnology Center
  • 研究キーワード
    Research Keywords

    Functional oxide materials
    Nano-electronics materials and devices
    Exploration of new nano-material physics
Research Subject
Exploration of new material physics and electronic applications in functional oxide nano-thin films and devices

研究の背景 Background


Correlated electron oxides show drastic change of electronic conductivity due to an electronic phase transition by small external fields, expected to lead to realize high sensitive sensors, high speed memory and switching devices. Consideration of nano-spatial characteristics of these materials indicates that different types of electronic phases derived from correlated electrons coexist inhomogeneously in nature. If we can directly approach the electronic phase transition of the single nano-domain and operate it, enhancement of On/Off ratio and power saving would be expected.

研究の目標 Outcome


The purpose of my research is to establish oxide nanotechnology and to control electronic phase transition of single nano-domain by electronic fields or lattice strain using well-designed device structures in order to explore new physics behind nano-space and to create electronic phase memories and switching devices having huge on/off ratio and field-effect transistors with correlated electron materials.

研究図Research Figure

Fig.1. SEM image of VO2 nanowires with Ti/Au electrodes (upper) and Temperature dependence of resistivity in a VO2 nanowire and a thin film (lower). Fig.2. AFM image of side gate field effect transistor structure (upper) and time and normalized resistance in humid air condition (lower) . Fig.3. SEM image of a free-standing VO2/TiO2 cantilever (upper) and Multiple resistance states at bias current upon pulses of different intensities (lower).

文献 / Publications

Appl. Phys. Lett. 104, 023104 (2014), Phys. Rev B 89, 035141 (2014), Appl. Phys. Exp. 7, 045201 (2014). Adv. Mater. 25, 6430 (2013).,
Appl. Phys. Lett. 102, 0153106 (2013). Adv. Mater. 24, 2929 (2012)