Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/04

  • 研究者氏名
    Researcher Name

    川西咲子 Sakiko KAWANISHI
    助教 Assistant Professor
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    プロセスシステム工学研究部門 材料分離プロセス研究分野
    Division of Process and System Engineering, Materials Separation Processing
  • 研究キーワード
    Research Keywords

    Widegap crystals
    Thermophysical properties of high-temperature melts
    Crystal growth
    Chemical thermodynamics
Research Subject
Solution growth of silicon carbide

研究の背景 Background


Silicon carbide (SiC) is a wide bandgap semiconducting material for high power devices. Physical vapor transport (PVT) method is commonly used to produce bulk single crystalline SiC. It requires an extremely high operation temperature, namely 2300 ℃, leading to high production cost. Also the dislocation density is too high for its wide application. Solution growth is an innovative method for producing high-quality SiC bulk crystals. Rapid growth has been investigated using Si–Cr, Si–Ti, and Fe–Si based solutions.

研究の目標 Outcome


What is the limitation of the growth rate and crystal quality obtained by solution growth of SiC? By utilizing the real-time observation of the growth interface of SiC, we will propose a concrete condition to obtain ultrarapid and high quality crystals.

研究図Research Figure

Fig.1. Schematic illustration of the solution growth of SiC. Fig.2. Cross section of the SiC layer grown on the C face of a 6H-SiC wafer at 1633 K. Fig.3. Interface image during solution growth of 4H-SiC at 1673 K.

文献 / Publications

J. Cryst. Growth, 408, 25 (2014). J. Appl. Phys., 114, 214313 (2013). J. Cryst. Growth, 381, 121 (2013). Mater. Sci. Forum, 740–742, 35 (2013).
Mater. Sci. Forum, 740–742, 31 (2013). Jpn. J. Appl. Phys., 49, 051302 (2010). J. Alloys Compd., 490, 31 (2010). Mater. Trans., 50, 806 (2009).