Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/04

  • 研究者氏名
    Researcher Name

    川西咲子 Sakiko KAWANISHI
    助教 Assistant Professor
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    プロセスシステム工学研究部門 材料分離プロセス研究分野
    Division of Process and System Engineering, Materials Separation Processing
  • 研究キーワード
    Research Keywords

    Crystal growth
    In-situ observation
    High-temperature process
Research Subject
Exploration of material processes by visualization of high-temperature reactions

研究の背景 Background


Various high-temperature reactions occur in the materials manufacturing process, such as crystal growth, solidification, refining, and smelting processes. In order to improve the quality of materials and the efficiency of processes, it is necessary to skillfully manipulate the phenomena occurring between high-temperature melts and different phases. For this purpose, we need to reveal various interfacial reactions that occur at solid-liquid, liquid-liquid, and solid-gas-liquid interfaces.

研究の目標 Outcome


"Seeing is believing" is the motto of my lifework and I am trying to elucidate high-temperature phenomena such as crystal growth of silicon carbide and gas evolution reactions in the copper smelting process using an original in-situ observation microscope. Based on the observation results of interfacial phenomena, and by adding considerations based on thermodynamics and kinetics, I would like to improve the efficiency in material manufacturing processes and quality of the materials.

研究図Research Figure

Fig.1. Spiral dissolutions of SiC into molten alloy at 1230 ºC during melt back process.

Fig.2. Gas formation reaction between matte and magnetite at 1200 ºC during copper smelting process.

Fig.3. Large n-type SnS crystal for photovoltaic applications.

文献 / Publications

その場観察: Materials, 15 (2022), 1796., Metall. Mater. Trans. B, 52 (2021), 3720., Metall. Mater. Trans. B, 52 (2021), 2619.
結晶成長・評価: Solar RRL, 5 (2021), 2000708., Cryst. Growth Des., 20 (2020), 5931-5939., Cryst. Growth Des., 20 (2020), 4740.