ネットワーク型共同研究拠点を支える 人・環境と物質をつなぐイノベーション創出ダイナミック・アライアンス 研究者データベース

Metal chalcogenide quantum dots and metal halide perovskite nanomaterials emerge as a promising and cost-effective class of semiconductors for next-generation photoluminescent, electroluminescent and photovoltaic devices. These nanomaterials own high optical absorption coefficients and narrow-band bright photoluminescence, which are in addition to the composition-and size-dependent tunable bandgap, exciton binding energy, and carrier diffusion. However, these materials show photobleaching or stochastic fluctuations in their luminescence due to electronics/ionic defects and photo-charging. Therefore, it is essential to classify the origins of the blinking and bleaching processes and develop high-quality quantum optical materials.

Semiconductor quantum dots, nanocrystals, and microcrystals with stable photoluminescence and electroluminescence are developed by synthesizing these nanomaterials, analyzing their photoluminescence properties at the single-particle level, and passivating ionic and electronic defects. Random charging, blinking, and bleaching of metal chalcogenide quantum dots are suppressed by photoinduced electron transfer from molecular donors. Conversely, the photoluminescence and electroluminescence properties of halide perovskite quantum dots, nanocrystals, and microcrystals are optimized by real-time halide vacancy filling and light-soaking. Thus, by combining materials synthesis and optical studies with physicochemical modification of the structure and properties, this research develops highly luminescent semiconductor materials.