ネットワーク型共同研究拠点を支える 人・環境と物質をつなぐイノベーション創出ダイナミック・アライアンス 研究者データベース

Transparent oxide semiconductor (TOS) films exhibits can be applied in various interesting electronic devices because of their optical transparency and electrical transport properties. Such applications include transparent film transistors, infrared sensor, and thermoelectric devices. However, oxide semiconductors exhibit slower electrons compared to classical semiconductors, which hinders the operation speed for practical applications. Improving the transport properties of TOS can revolutionize the era of transparent electronic devices in this regard. For this reason, understanding the electrical and thermal transport properties is essential.

Transport properties reflect fundamental characteristics of materials such as density of states, band structure, phase transitions, and electron entropy. Therefore, they are crucial for engineering the device performance as well as controlling the heat dissipation. Our research discipline is focused on enhancing the speed of electrons while hindering the phonons propagation to develop oxide films with excellent functional properties such as high electron mobility (transistor) and low thermal conductivity (thermoelectric, thermal barrier).