Research Institute for Electronic Science, Hokkaido University


LAST UPDATE 2018/10/26

  • 研究者氏名
    Researcher Name

    ジョ・ヘジュン Hai Jun CHO
    助教 Assistant Professor
  • 所属
    Professional Affiliation

    Research Institute for Electronic Science, Hokkaido University

    物質化学研究部門 薄膜機能材料研究分野
    Laboratory of Functional Thin Film Materials
  • 研究キーワード
    Research Keywords

    Thermal conductivity
    Electron entropy
    Electrical transport properties
    Oxide thin films
    Pulsed laser deposition
Research Subject

Thermoelectrical properties of functional oxide thin films

研究の背景 Background

Transparent oxide semiconductor (TOS) films exhibits can be applied in various interesting electronic devices because of their optical transparency and electrical transport properties. Such applications include transparent film transistors, infrared sensor, and thermoelectric devices. However, oxide semiconductors exhibit slower electrons compared to classical semiconductors, which hinders the operation speed for practical applications. Improving the transport properties of TOS can revolutionize the era of transparent electronic devices in this regard. For this reason, understanding the electrical and thermal transport properties is essential.

研究の目標 Outcome

Transport properties reflect fundamental characteristics of materials such as density of states, band structure, phase transitions, and electron entropy. Therefore, they are crucial for engineering the device performance as well as controlling the heat dissipation. Our research discipline is focused on enhancing the speed of electrons while hindering the phonons propagation to develop oxide films with excellent functional properties such as high electron mobility (transistor) and low thermal conductivity (thermoelectric, thermal barrier).

研究図Research Figure

Fig.1. Electron mobility values of La-doped BaSnO3 observed from epitaxial films and bulk single crystals Fig.2. Vacuum annealing effect on the (a) lateral grain size and (b) electron mobility of La-doped BaSnO3 films Fig.3. Thermal conductivity of La-doped BaSnO3 films fabricated in oxygen (O2) and ozone (O3) atmospheres

文献 / Publications

A.V. Sanchela, H.J. Cho, H. Ohta et al., arXiv:1808.07619

H.J. Cho, H. Ohta et al., arXiv:1808.10570