The Institute of Scientific and Industrial Research, Osaka University


LAST UPDATE 2017/02/26

  • 研究者氏名
    Researcher Name

    金崎順一 Jun’ichi KANASAKI
    准教授 Associate Professor
  • 所属
    Professional Affiliation

    The Institute of Scientific and Industrial Research, Osaka University

    Division of Advanced Materials and Beam ScienceDepartment of Excited Solid-State Dynamics
  • 研究キーワード
    Research Keywords

    半導体, 炭素系物質
    Semiconductors, Carbon materials
    Ultrafast carrier dynamics
    Dynamical atomic processes induced by electronic excitations
Research Subject

Elucidation and control of ultrafast carrier dynamics in photo-excited semiconductors
Novel phase formation and dynamical atomic processes controlled by electronic excitations

研究の背景 Background


Excited carriers generated by photo-excitations are not only associated directly with electronic and spin properties of functional devices but also induce varieties of photo-induced phenomena, such as photo-catalyzed reactions, photovoltaic generation, photo-induced structural changes and phase transformations. Since the primary process of light-matter interaction is the generation of nonequilibrium excited carriers and the subsequent relaxation processes, considerable attention has been focused to the understanding and control of the fundamental dynamical processes of photogenerated carriers included in the photo-induced phenomena.

研究の目標 Outcome


The main objectives are to completely determine the ultrafast energy-, momentum-, and spin-relaxation dynamics of photo-excited carriers in solids and to elucidate the fundamentals of underlying physics concerning the excitation-induced atomic processes. The research is also devoted to establish advanced technologies controlling carrier and atomic dynamics by fully exploiting electronic-excitation effects toward the realization of novel structure and function that never be attained by conventional thermal processes.

研究図Research Figure

Fig.1. The photoelectron images at 20fs after excitations of GaAs with s-, (a), and p-polarized, (b), laser pulses, as functions of energy and angle. (c) Normal photoemission spectra in the images in (a) and (b). (d) The photoelectron image at 10ps after excitation. (e) Experimental geometry of the measurement together with the surface & bulk Brillouin zone for GaAs. Fig.2. (a) The photoemission map for Г-valley electrons injected by 2.3-eV laser pulses as functions of energy and delay time. (b) Temporal changes of the total intensity of the Г- valley electrons. (c) The image of photoelectrons 70fs after excitation. (d) Photoemission intensities as a function of θ, for -20fs (red) and +70fs (black). Fig.3. Formation of sp3-bonded carbon nanostructures by photo-excitation of graphite.

文献 / Publications

Physical Review B91, 045201 (2015). Physical Review Letters 113, 237401 (2014). Scientific Reports 4, 06849 (2014). Surface Science 629, 49(2014)
Physical Review B85, 085423 (2012). Surface Science 605, 1497(2011). Journal of Applied Physics 110, 103516(2011). Physical Review Letters 102, 087402(2009).