Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/19

  • 研究者氏名
    Researcher Name

    赤瀬善太郎 Zentaro AKASE
    講師 Lecturer
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    計測研究部門 電子線干渉計測研究システム
    Division of Measurements, Electron Interference Measurement 
  • 研究キーワード
    Research Keywords

    electron holography
    in-situ Lorentz microscopy
    quantitative electron diffraction
    magnetic materials / superconducting materials
Research Subject
Development of advanced transmission electron microscopy for electromagnetic analyses of practical materials

研究の背景 Background


Transmission electron microscopy has been developed as a tool which can analyze crystallographic, metallographic and electromagnetic information complementarily, with high spatial resolution. During the past decade, resolution and evaluation technique of TEM have been improved dramatically. Our research group has focused on the development of electromagnetic field analysis with TEM.

研究の目標 Outcome


We have developed in-situ observation techniques such as “analysis of magnetic flux distribution around superconductor under external magnetic field at low temperature”, “in-situ Lorentz microscopy with alternating magnetic field”, etc. Utilizing these techniques, we hope to reveal the relation between the function and the nanostructure of advanced / practical materials. And also we will continue to develop the methods of electron holography.

研究図Research Figure

Fig.1. Scanning Ion microscope (SIM) and reconstructed phase images of a square-column-shaped Y-Ba-Cu-O superconductor. (a) Magnetic flux distribution around a high-Tc Y-Ba-Cu-O superconductor under external magnetic field 8.0 kA/m at 12 K. The reconstructed phase image overlaps the SIM image of the specimen for comparison between the distributions of the magnetic flux and the 211-phase particles. (b-ii) Magnetic flux distribution without external magnetic field at 13 K. (b-i) and (b-iii) are SIM images showing left and right side views of the specimen.

文献 / Publications

Mater. Trans. 48 (2007) 2626-2630. J. Electron Microsc. 59 (2010) 207-213. J. Appl. Phys. 111 (2012) 033912. Appl. Phys. Lett., 104 (2014) 131601. J. Magn. Magn. Mater., 375 (2015) 10-14.