Institute of Multidisciplinary Research for Advanced Materials, Tohoku University


LAST UPDATE 2021/05/18

  • 研究者氏名
    Researcher Name

    秩父重英 Shigefusa CHICHIBU
    教授 Professor
  • 所属
    Professional Affiliation

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    計測研究部門 量子光エレクトロニクス研究分野
    Division of Measurements, Quantum Optoelectronics Laboratory
  • 研究キーワード
    Research Keywords

    Optical properties of condensed matter
    Fabrication of quantum structures
    Carrier dynamics
    Spatio-time-resolved spectroscopy
Research Subject
Exploration of wide bandgap group III-nitride and group II-oxide semiconductor quantum structures and spatio-time-resolved spectroscopy

研究の背景 Background


Research objectives are to design and create quantum nanostructures desirable for environment-friendly functional optoelectronic devices, especially workable in deep ultraviolet wavelengths, based on wide bandgap semiconductors. Ultrafast recombination dynamics of excited particles in these structures are studied by time-resolved spectroscopy, and local luminescence properties are proved by spatially-resolved luminescence techniques.

研究の目標 Outcome


We are growing quantum structures based on wide bandgap (Al,In,Ga)N and (Mg,Zn)O semiconductors by metalorganic vapor phase epitaxy (MOVPE), molecular-beam epitaxy, and unique helicon-wave-excited-plasma sputtering epitaxy methods. Ultrafast local recombination dynamics are studied by spatio-time-resolved cathodoluminescence system equipped with a home-made focused pulsed electron gun.

研究図Research Figure

Fig.1.Environment-friendly wide bandgap group III-nitride and group-II oxide semiconductors. Fig.2. Concept of Spatio-time-resolved cathodoluminescence (STRCL) system equipped with a femtosecond pulsed photoelectron gun Fig.3. Luminescence from nonpolar m-plane InxGa1-xN films grown by MOVPE

文献 / Publications

J. Appl. Phys. 116, 213501 (2014). Jpn. J. Appl. Phys. 54, 030303 (2015). Jpn. J. Appl. Phys. 53, 100301 (2014). Cryst. Growth & Design 13, 4158 (2013). Appl. Phys. Lett. 103, 142103 (2013). Appl. Phys. Lett. 103, 052108 (2013). J. Appl. Phys. 113, 213506 (2013). 応用物理 81,502 (2012).