IMRAM

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

東北大学
多元物質科学研究所

LAST UPDATE 2017/02/26

  • 研究者氏名
    Researcher Name

    冨田大輔 Daisuke TOMIDA
    助教 Assistant Professor
  • 所属
    Professional Affiliation

    東北大学多元物質科学研究所
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    無機材料研究部門
    Division of Inorganic Material Research
  • 研究キーワード
    Research Keywords

    III族窒化物
    イオン液体
    超臨界流体
    熱物性
    Group III nitrides
    Ionic liquids
    Supercritical fluids
    Thermophysical properties
研究テーマ
Research Subject
超臨界流体・イオン液体を用いた材料合成プロセスの開発と熱物性計測
Development of material synthesis process using supercritical fluids – ionic liquids and measurement of thermophysical properties

研究の背景 Background

地球環境に配慮しつつ経済成長を続けるためには、環境調和型のプロセス開発や省エネルギー化に寄与する材料の開発が必要です。このため、イオン液体を溶媒とした有機合成プロセスや超臨界アンモニアを用いたIII族窒化物合成プロセスへの関心が高まっています。

In order to continue economic growth, considering the global environment, the environment-conscious process and the material which contributes to energy saving need to be developed. For this reason, the organic-synthesis process which used the ionic liquid as a solvent, or the group-III nitride synthesis process using supercritical ammonia draws increasing attention.

研究の目標 Outcome

超臨界アンモニアを溶媒としたアモノサーマル法に関わる熱物性データに基づくIII族窒化物の合成プロセスの開発を目指しています。また、イオン液体を溶媒とした有機合成プロセスの設計に関わる輸送物性の広範で精密な測定および相関、推算手法の開発を行っています。

Development of the group-III nitride synthesis process based on the thermphysical properties data related to the ammonothermal method which used supercritical ammonia as a solvent is performed. Moreover, extensive and precise measurement of the transport properties related to the design of the organic synthesis process which used the ionic liquid as a solvent, and development of the correlation and prediction method are performed.

研究図Research Figure

Fig.1. Temperature dependence of the solubility of GaN in supercritical ammonia with acidic mineralizers. Fig.2. Microscopic image of GaN layer grown at 558 ̊C using an NH4I mineralizer and photograph of the 1.24- mm-thick GaN epilayer on the Ga-polar side of an HVPE-seed crystal. Fig.3. Relative viscosity of three ionic liquids and squalene with CO2 mole fraction at 293.15 K, 10 MPa.

文献 / Publications

J. Cryst. Growth, 404, 168 (2014). Cryst. Growth Des., 13, 4158 (2013). Fluid Phase Equilib., 340, 31 (2013). CrystEngComm, 15, 5382 (2013). Applied Catalysis A: General, 451, 1 (2013).

研究者HP